This has led to considerably better FTO coverage and improved hole blocking, as evidenced by cyclic voltammetry measurements. Absorption and resistivity measurements indicate that SnO 2 etching process is involved in morphology healing. Here we observe the smoothing of SnO 2 films as a result of long-time NH 4F treatment, which could be a result of a slight etching-deposition process. Recently it was shown that short-time NH 4F treatment (2 sec) with spin coating method reduces interface traps by improving surface chemistry. Here, we show how long-time NH 4F-based water bath treatment of SnO 2 layer makes smoothing and morphological improvements and enhances the device performance. Surface modification of SnO 2 electron transporting layer (ETL) plays a critical role in the performance of SnO 2-based planar perovskite solar cells (PSC).
0 Comments
Leave a Reply. |
Details
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |